ao4403/ MC4403 freescale 1 these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. v ds (v) r ds(on) m( ) i d (a) 60 @ v gs = -4.5v -8.3 80 @ v gs = -2.5v -6.7 150 @ v gs = -1.8v -4.5 product summary -20 p-channel 20-v (d-s) mosfet ? low r ds(on) provides higher efficiency and extends battery life ? low thermal impedance copper leadframe soic-8 saves board space ? fast switching speed ? high performance trench technology notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature 1 2 3 4 5 6 7 8 symbol maximum units v ds -20 v gs 12 t a =25 o c -8.3 t a =70 o c -6.7 i dm 50 i s -2.1 a t a =25 o c 3.1 t a =70 o c 2.0 t j , t stg -55 to 150 o c drain-source voltage continuous drain current a i d a power dissipation a p d operating junction and storage temperature range w continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parameter pulsed drain current b v gate-source voltage symbol maximum units t <= 10 sec 40 o c/w steady-state 70 o c/w thermal resistance ratings parameter maximum junction-to-ambient a r ja www.freescale.net.cn ao4403/ MC4403
2 notes a. pulse test: pw <= 300us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. freescale reserves the right to make changes without fu rther notice to any products herein. freescale makes no warranty, representation or guarantee regarding the suitability of its produ cts for any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically dis claims any and all liability, including without lim itation special, consequential or incidental damages. ?typical? parameters which may be provide d in freescale data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operati ng parameters, including ?typicals? must be validat ed for each customer application by customer?s technical experts. afreescale does not convey any license under its patent rights nor the rights of others. freescale products are not designed, intended, or authorized for use as components in sy stems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale product could create a situ ation where personal injury or death may occur. should buyer purchase or use freescale products for any s uch unintended or unauthorized application, buyer s hall indemnify and hold freescale and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, da mages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any cl aim of personal injury or death associated with suc h unintended or unauthorized use, even if such claim alleges that freescale was negligent regarding the design or manufacture of the part. freescale is an equal opportunity/affirmative action employer. min typ max gate-threshold voltage v gs(th) v ds = v gs , i d = -250 ua -0.7 gate-body leakage i gss v ds = 0 v, v gs = 12 v 100 na v ds = -16 v, v gs = 0 v -1 v ds = -16 v, v gs = 0 v, t j = 55 o c -5 on-state drain current a i d(on) v ds = -4.5 v, v gs = -10 v -50 a v gs = -4.5 v, i d = -8.3 a 60 v gs = -2.5 v, i d = -6.7 a 80 v gs = -1.8 v, i d = -4.5 a 150 forward tranconductance a g fs v ds = -15 v, i d = -8.3 a 70 s diode forward voltage v sd i s = 2.5 a, v gs = 0 v -0.6 v total gate charge q g 16.7 gate-source charge q gs 1.8 gate-drain charge q gd 1.9 turn-on delay time t d(on) 20 rise time t r 23 turn-off delay time t d(off) 289 fall-time t f 134 r ds(on) specifications (t a = 25 o c unless otherwise noted) ua i dss zero gate voltage drain current static te st conditions symbol v dd = -10 v, r l = 6 , i d = -1 a, vgen = -4.5 v ns v ds = -10 v, v gs = -4.5 v, i d = -8.3 a nc m parameter limits unit dynamic b drain-source on-resistance a freescale www.freescale.net.cn ao4403/ MC4403 ao4403/ MC4403
3 typical electrical characteristics figure 5. gate charge figure 1. output characteristics figure 2. transfer characteristics figure 4. capacitance figure 6. on-resistance vs. junction temperature 0 300 600 900 1200 1500 0 5 10 15 20 -v ds , drain to source voltage (v) capacitance (pf) c iss c oss c rss 0 5 10 15 20 0 1 2 3 4 -v ds , drain to source voltage (v) -i d , drain current (a) v gs = -4.5v -2.5v -2.0v -3.0v 0 5 10 15 0.5 1 1.5 2 2.5 -v gs , gate to source voltage (v) -i d , drain current (a) t a = -55 o c 25 o c 125 o c figure 3. on-resistance vs. drain current 0.8 1 1.2 1.4 1.6 0 5 10 15 20 -i d , dirain current (a) r ds(on) , normalized drain-source on-resistance v gs = -2.5v -4.5v -10 -8 -6 -4 -2 0 0 4 8 12 16 20 qg, charge (nc) vgs voltage ( v ) 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance v gs = -4.5v freescale www.freescale.net.cn ao4403/ MC4403 ao4403/ MC4403
4 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 t1, time (sec) p(pk), peak transient power (w) single pulse rqja = 125oc/w ta = 25oc 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 -v sd , body diode forward voltage (v) -i s , reverse drain current (a) t a = 125 o c 25 o c 0 0.03 0.06 0.09 0.12 0.15 1 2 3 4 5 -v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, tim e (s ec ) s ingle p uls e 0.01 0.02 0.0 0.1 0.2 d = 0.5 rqj a(t) = r(t) + r qj a C r qj a = 125 /w tj - ta = p * r qj a(t) duty c ycle , d = t1 / t2 p (pk) t1 t2 typical electrical characteristics figure 11. transient thermal response curve figure 10. single pulse maximum power dissipation figure 9. vth gate to source voltage vs temperature figure 7. source-drain diode forward voltage figure 8. on-resistance with gate to source voltage normalized thermal transient junction to ambient 0.4 0.6 0.8 1 1.2 -50 -25 0 25 50 75 100 125 150 t a , ambient temperature ( o c) -v th , gate-source thresthold voltage (v) i d = -250 a freescale www.freescale.net.cn ao4403/ MC4403 ao4403/ MC4403
5 package information so-8: 8lead h x 45 freescale www.freescale.net.cn ao4403/ MC4403 ao4403/ MC4403
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